ALD （Atomic layer deposition）和 CVD（Chemical Vapour Deposition）
Semiconductor ALD/CVD precursors are the core and key raw materials for semiconductor thin film deposition processes. They can be used to prepare metal/oxide/nitride thin films through chemical vapor deposition (CVD) and atomic layer deposition (ALD), and are widely used in integrated circuit manufacturing processes at advanced technology nodes such as 90nm-14nm and even 7nm. They are widely used in high-end chip manufacturing, including logic chips, AI chips, 5G chips, high-capacity memory, and cloud computing chips.
Atomic Layer Deposition (ALD)
Atomic layer deposition (ALD) is a thin film deposition technique. In fact, it is a chemical vapor deposition technique based on self limiting surface reactions. It involves depositing a thin film of material onto a substrate by altering the cycle of gas-phase chemical reactions. During each cycle, precursor gas is introduced into the reaction chamber, where it reacts with the substrate surface to form a monolayer material. Then remove the unreacted precursor gas and introduce a second precursor gas to react with the monolayer. Repeat the cycle until the desired film thickness is reached.
ALD has many applications. This technology can be used in various fields such as electronics, optics, energy, and catalysis. It is mainly used in the production of semiconductors and integrated circuits. ALD helps to deposit high-k dielectric materials, such as hafnium oxide and aluminum oxide, which are important components of storage chips and microprocessors.
ALD can also be used for the production of thin-film solar cells. It helps to deposit thin layers of materials such as zinc oxide and cadmium sulfide. These are crucial for the performance of solar cells. Deposition of these layers using ALD can produce high-quality thin films with excellent optical and electrical properties.
ALD also helps to produce high-performance coatings for optical components. For example, in lenses and mirrors, ALD deposits anti reflective coatings. ALD also helps to deposit barrier coatings on flexible displays and organic electronic products.
CVD (Chemical Vapor Deposition)
CVD (Chemical Vapor Deposition) is a commonly used technique for depositing thin films onto substrates in various applications. CVD involves the reaction of gas-phase reactants on or near the substrate surface to form a solid thin film. It also involves precursor gases. It decomposes or reacts with another gas to form a solid thin film on the substrate. The precursor gas is usually introduced into a reaction chamber containing a substrate, where it is heated to a temperature sufficient to decompose the precursor or react with another gas to form a solid film on the substrate.
CVD has many different applications in fields such as optics, microelectronics, and materials science. It can also be used in the semiconductor industry to manufacture thin films and coatings for electronic devices. In the field of optics, CVD can be used to deposit coatings on lenses, mirrors, and other optical components. In the field of materials science, CVD helps to synthesize various materials such as ceramics, polymers, and metals.
The difference between ALD and CVD
definition
ALD is a chemical vapor deposition technique based on self limiting surface reactions, while CVD is a widely used material processing technique in which a thin film is formed on a heated substrate through chemical reactions of gas-phase precursors.
mode
ALD can deposit a thin film with one atomic layer at a time, while CVD can deposit a wider range of thin films.
temperature
ALD requires lower temperatures, while CVD requires higher temperatures.
application area
ALD can be used for the production of semiconductors and integrated circuits, thin-film solar cells, and high-performance coatings for optical components. On the other hand, CVD has a wide range of applications in fields such as optics, microelectronics, and materials science, which contribute to the manufacturing of thin films and coatings for electronic devices, deposition of coatings on lenses and mirrors, and synthesis of various materials.
conclusion
ALD and CVD are thin film deposition techniques that facilitate the deposition of thin films on substrates.
The main difference between ALD and CVD is that ALD deposits a thin film of one atomic layer at a time, while CVD can deposit a wider range of thin films.
